Sandhya, C. ; Ganguly, U. ; Chattar, N. ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, J. M. ; Mahapatra, S. (2009) Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) under Fowler–Nordheim tunneling program/erase operation IEEE Electron Device Letters, 30 (2). pp. 171-173. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/document/4731840/
Related URL: http://dx.doi.org/10.1109/LED.2008.2009552
Abstract
Silicon-nitride trap layer stoichiometry in Charge Trap Flash (CTF) memory strongly impacts electron and hole trap properties, memory performance and reliability. Important tradeoffs between Program/Erase (P/E) levels (memory window), P- and E-state retention loss and E-state window closure during cycling are shown. Increasing the Si richness of the SiN layer improves memory window, cycling endurance and E-state retention loss but at the cost of higher P-state retention loss. The choice of SiN stoichiometry to optimize CTF memory performance and reliability is discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | SONOS; Charge Trap Flash (CTF); Cycling Endurance; Program/Erase (P/E) Window; Retention; SANOS; Silicon Nitride (Sin) |
| ID Code: | 112546 |
| Deposited On: | 02 Apr 2018 09:20 |
| Last Modified: | 02 Apr 2018 09:20 |
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