Singh, Pawan K. ; Bisht, Gaurav ; Auluck, Kshitij ; Sivatheja, M. ; Hofmann, Ralf ; Singh, Kaushal K. ; Mahapatra, Souvik (2010) Performance and reliability study of single-layer and dual-layer platinum nanocrystal flash memory devices under NAND operation IEEE Transactions on Electron Devices, 57 (8). pp. 1829-1837. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/document/5491145/?reloa...
Related URL: http://dx.doi.org/10.1109/TED.2010.2050961
Abstract
Memory Window (MW) and the retention of Single-layer (SL) and Dual-layer (DL) Platinum (Pt) Nanocrystal (NC) devices are extensively studied before and after Program/erase (P/E) cycling. DL devices show better charge storage capability and reliability over the SL devices. Up to 50% improvement in the stored charge is estimated in the DL device over SL when P/E is performed at equal field. Excellent high temperature and postcycling retention capabilities of SL and DL devices are shown. The impact of the Interlayer Film (ILF) thickness on the retention of the DL structure is reported. While SL devices show poor P/E cycling endurance, DL cycling is shown to meet the minimum requirements of the Multilevel Cell (MLC) operation.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| Keywords: | Single Layer (SL); Cycling Endurance; Dual Layer (DL); Flash Memory; Metal Nanocrystals (NC); Reliability; Retention |
| ID Code: | 112538 |
| Deposited On: | 02 Apr 2018 08:42 |
| Last Modified: | 02 Apr 2018 08:42 |
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