Mahapatra, Souvik ; Alam, Muhammad Ashraful (2008) Defect generation in p-MOSFETs under Negative-Bias Stress: an experimental perspective IEEE Transactions on Device and Materials Reliability, 8 (1). pp. 35-46. ISSN 1530-4388
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Official URL: http://ieeexplore.ieee.org/document/4384324/
Related URL: http://dx.doi.org/10.1109/TDMR.2007.912261
Abstract
In this paper, a focused review is made of our previously reported (2002-2007) work on Negative-bias Temperature-instability (NBTI) measurement and analysis. Using suitable cross-reference to other published work, the impacts of stress condition, characterization technique and gate-oxide process on measured NBTI parameters are reviewed. The large scatter of measured time, bias and temperature dependencies of NBTI, which are observed in published literature, is carefully analyzed. A common framework for NBTI physical mechanism is suggested and discussed. Issues lacking proper understanding at present are also highlighted.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Si Oxynitride; Bulk Traps; Charge Pumping (CP); Hole Trapping; Hot-hole Generation; Interface Traps; Negative-bias Temperature Instability (NBTI); On-the-fly (OTF) IDLIN; P-MOSFETS; Reaction–diffusion (RD) Model |
| ID Code: | 112504 |
| Deposited On: | 02 Apr 2018 08:03 |
| Last Modified: | 02 Apr 2018 08:03 |
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