Maheta, Vrajesh D. ; Naresh Kumar, E. ; Purawat, Shweta ; Olsen, Christopher ; Ahmed, Khaled ; Mahapatra, Souvik (2008) Development of an ultrafast on-the-fly IDLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs IEEE Transactions on Electron Devices, 55 (10). pp. 2614-2622. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/document/4631417/
Related URL: http://dx.doi.org/10.1109/TED.2008.2003224
Abstract
An ultrafast on-the-fly technique is developed to study linear drain current (IDLIN) degradation in plasma and thermal oxynitride p-MOSFETs during Negative-bias Temperature Instability (NBTI) stress. The technique enhances the measurement resolution (ldquotime-zerordquo delay) down to 1 mus and helps to identify several key differences in NBTI behavior between plasma and thermal films. The impact of the time-zero delay on time, temperature and bias dependence of NBTI is studied and its influence on extrapolated safe-operating overdrive condition is analyzed. It is shown that plasma-nitrided films, in spite of having higher N density, are less susceptible to NBTI than their thermal counterparts.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| Keywords: | Time Exponents; Field Acceleration; Negative-bias Temperature Instability (NBTI); Plasma Oxynitride; P-MOSFET; Safe-operating Voltage; Temperature Activation; Thermal Oxynitride |
| ID Code: | 112500 |
| Deposited On: | 02 Apr 2018 07:56 |
| Last Modified: | 02 Apr 2018 07:56 |
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