Ultralow noise field-effect transistor from multilayer graphene

Abstract

We present low-frequency electrical resistance fluctuations or noise in graphene-based field-effect devices with varying number of layers. In single-layer devices, the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on grapheneband structure and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers.