Sali, Jaydeep V. ; Panaskar, Varsha D. ; Takwale, M. G. ; Marathe, B. R. ; Bhide, V. G. (1997) Preparation of highly conductive p-type μc-Si:H window layer using lower concentration of hydrogen in the rf glow discharge plasma Solar Energy Materials and Solar Cells, 45 (4). pp. 413-421. ISSN 0927-0248
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S09270...
Related URL: http://dx.doi.org/10.1016/S0927-0248(96)00088-8
Abstract
Boron doped p-type hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by radio-frequency glow discharge method. Highly conductive ρ-type μc-Si:H films can be obtained even with lower concentration of hydrogen in the rf glow discharge plasma if chamber pressure is low. Effects of increase in hydrogen (H2) flow rate and chamber pressure have been studied. The structural properties of the films have been studied by x-ray diffractometry. The electrical and optical characterization have been done by dark conductivity, hall measurements and optical absorption measurements respectively. Film with conductivity 0.1(Ω-cm)-1 with band gap 2.1 eV has been obtained.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Hydrogenated Microcrystalline Silicon Films; Radio-frequency Glow Discharge; Conductivity |
| ID Code: | 5041 |
| Deposited On: | 18 Oct 2010 05:24 |
| Last Modified: | 19 May 2011 04:48 |
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